References
1. “The Growth of Single Crystals of Optical Materials By the Gradient Solidification Method”, A. Horowitz, S. Biderman, G. Ben Amar, U. Laor, M. Weiss and A. Stern, J. Crystal Growth 85 (1987) 215.
2. “Crystal Growth of Optical Materials by the Gradient Solidification Method”, S. Biderman, G. Ben Amar, Y. Einav, A. Horowitz, U. Laor, M. Weiss and A. Stern, SPIE vol 819 (Infrared Technology XIII) (1987) 157.
3. “Surface Energy Effects in the GSM Growth of Sapphire Boules and Domes”
A. Horowitz, S. Biderman, Y. Einav, G. Ben Amar, D. Gazit, A. Stern and M. Weiss, The 1990 Annual Conference of the Israeli Association for Crystal and Thin Film Growth, October 30, 1990, The Weizmann Institute of Science, Rehovot.
4. “Production of Sapphire Domes by the Growth of Near-Net-Shape Single Crystals”, S. Biderman, A. Horowitz, Y. Einav, G. Ben Amar, D. Gazit, A. Stern and M. Weiss, SPIE 1535 (Passive Materials for Optical Elements) (1991) 27.
5. “The Growth of Dome Shaped Sapphire Crystals by the GSM Method” A. Horowitz, S. Biderman, D. Gazit, Y. Einav, G. Ben Amar and M. Weiss, J. Crystal Growth, 128 (1993) 824.
6. “Thermal Modeling of Sapphire Dome Growth”
S. Brandon, S. Levi, D. Gazit and A. Horowitz, The 11th International Conference on Crystal Growth, The Hague, Netherlands, June 18-23, 1995.
7. “Heat Transfer During the Growth of Sapphire Domes”
S. Levy, S. Brandon, A. Horowitz and D. Gazit, ACCG-10, Vail, Colorado, August 4-9, 1996.
8. “Interface shapes and Thermal Fields During the Gradient Solidification Method Growth of Sapphire Single Crystals”, S. Brandon, D. Gazit and A. Horowitz, J. Crystal Growth 167 (1996) 183.
9. “Improved Control of Sapphire Crystal Growth”, A. Horowitz, S. Biderman, Y. Einav, G. Ben Amar, and D. Gazit, J. Crystal Growth 167 (1996) 183.
10. Modeling Heat Transfer During the Confined Melt Growth of Oxide Crystals”, S. Brandon, Y. Liu, A. Virozub, D. Gazit and A. Horowitz, the Conference on Science and Technology of Laser Crystals 99, La Jolla, CA, USA, July 12-14, 1999. Invited Oral Presentation.
11. “Bonding of sapphire Components by Diffusion Bonding Processes”
G. Hayun, D. Gazit, S. Biderman, Y. Einav, G. Ben Amar, H. Lotem, A Venkert, A. Horowitz, M.P. Dariel, D. Sherman
The Thirteenth International Conference on Crystal Growth - in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy (ICCG-13/ICVGE-11), 30 July –4 August 2001, Doshisha University, Kyoto, Japan.
12. “Stress Relief Changes in the Surface Morphology of annealed sapphire”
Pinkas M., Lotem H., Ustilovsky Sh., Golan Y., Garstein E., Biderman S., Einav H., Ben Amar G. and Horowitz A.,
10th Israeli Materials Engineering Conference (IMEC-10), 7-8 Feb. 2002, Dead Sea, Israel.
13. “Characterization of Processing Induced Surface – Stress in Sapphire, Using the Twyman Effect”.
Haim Lotem, Malki Pinkas, Shlomo Biderman, Yehezkel Einav, Dan Gazit, Gabi Ben Amar and Atara Horowitz,
10th Israeli Materials Engineering Conference (IMEC-10), 7-8 Feb. 2002, Dead Sea, Israel.
14. "Optical and Microstructural Assessment of a Ring-pattern in as-grown Sapphire"
Lotem H., Pinkas M., Horowitz A., Einav Y., Ben Amar G., Weiss D., and Biderman S.,
21st IVS General Conference, The Dan Hotel, Tel Aviv, Israel, September 11-12, 2002.
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